Publication

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2015

(1) “Microscopic crystalline structure od a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template”
DT Khan, S. Takeuchi, Y. Nakamura, K. Nakamura, T. Arauchi, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura and A. Sakai
Journal of Crystal Growth, [411, pp.38-44 (201502)]
(2) “Using surface plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media”
A. Motogaito, S. Nakamura, J. Miyazaki, H. Miyake and K. Hiramatsu
Optics Communications, [341, pp.64-68 (201504)]

2014

(1) “Inhomogenious distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration”
S. Kurai, F. Ushijima, H. Miyake, K. Hiramatsu, and Y. Kobayashi
Journal of Applied Physics, [115, 053509 (201402)]
(2) “Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers”
H. Fang, M. Katagiri, H. Miyake, K. Hiramatsu, H. Oku, H. Asanuma and K. Kawamura
Journal of Applied Physics, [115, 063102 (201402)]
(3) “Transient photoluminescence of aluminum-rich (Al, Ga)N low-dimensional structures”
P. Lefebvre, C. Brimont, P. Valvin, B. Gil, H. Miyake, K. Hiramatsu
Physica Status Solidi (a), [211, pp.765-768 (201404)]
(4) “Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer”
H. Fang, M. Katagiri, H. Miyake, K. Hiramatsu, H. Oku, H. Asamura, K. Kawamura
Physica Status Solidi (a), [211, pp.744-747 (201404)]
(5) “Anistropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template”
T. Arauchi, S. Takeuchi, K. Nakamura, DT Khan, Y. Nakamura, H. Miyake, K. Hiramatsu, A. Sakai
Physica Status Solidi (a), [211, pp.731-735 (201404)]
(6) “Selective-area growth on non- and semi-polar bulk GaN substrates”
S. Okada, H. Miyake, K. Hiramatsu, Y. Enatsu, S. Nagao
Japanese Journal of Applied Physics, [53, 05FL04 (201405)]
(7) “High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy”
S. Kitagawa, H. Miyake, K. Hiramatsu
Japanese Journal of Applied Physics, [53, 05FL03 (201405)]
(8) “MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer”
M/ Katagiri, H. Fang, H. Miyake, K. Hiramatsu, H. Oku, H. Asanuma, K. Kawamura
Japanese Journal of Applied Physics, [53, 05FL09 (201405)]
(9) “Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants – With results for AlN optical constants”
T. Saito, K. Ozaki, K. Fukui, H. Iwai, K. Yamamoto, H. Miyake, K. Hiramatsu
Thin Solid Films, [571, pp.517-521 (201411)]
(10) “Binding energy of localized biexcitons in AlGaN-based quantum wells”
Y. Hayakawa, T. Fukumoto, K. Nakamura, H. Miyake, K. Hiramatsu, Y. Yamada
Applied Physics Express, [7, 122101 (201412)]
(11) “Si concentration dependence of structural in homogenities in Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well structures”
S. Kurai, K. Anai, H. Miyake, K. Hiramatsu, Y. Yamada
Journal of Applied Physics, [116, 235703 (201412)]

2013

(1) “Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources”
Fumitsugu Fukuyo, Shunsuke Ochiai, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, and Yuji Kobayashi
Japanese Journal of Applied Physics, [52, 01AF03 (201301)]
(2) “Fabrication of Binary Diffractive Lenses and the Application to LED Lighting for Controlling Luminosity Distribution”
Atsushi Motogaito, Kazumasa Hiramatsu
Optics and Photonics Journal, [3, pp.67-73 (201303)]
(3) “Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template”
Gou Nishio, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu
Journal of Crystal Growth, [370, pp.74-77 (201303)]
(4) “Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates”
Hao Fang, Yoshifumi Takaya, Hideto Miyake, Kazumasa Hiramatsu, Hidetoshi Asamura, Keisuke Kawamura and Hidehiko Oku
Journal of Crystal Growth, [370, pp.254-258 (201303)]
(5) “Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates”
Hao Fang,Yoshifumi Takaya,Hideto Miyake,Kazumasa Hiranatsu,Hidehiko Oku,Hidektoshi Asamura,Keisuke Kawamura
Japanese Journal of Applied Physics, [52, 08JB07 (201305)]
(6) “Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Loe-Pressure Metalorganic Vapor-Phase Epitaxy”
Satoshi Kurai,Fumitaka Ushijima,Yoichi Yamada Hideto Miyake,Kazumasa Hiramatsu
Japanese Journal of Applied Physics, [52, 08JL07 (201305)]
(7) “Selective Area Growth of Semipolar(2021)and(2021)GaN Substrates by Metalorganic Vapor Phase Epitaxy”
Daiki Jinno,Bei Ma,Hideto Miyake,Kazumasa Hiramatsu,Yuuki Enatsu,Satoru Nagao
Japanese Journal of Applied Physics, [52, 08JC06 (201305)]
(8) “AlN Grown on a-and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy”
Naoki Goriki,Hideto Miyake,Kazumasa Hiramatsu,Toru Akiyama,Tomonori Ito,Osamu Eryu
Japanese Journal of Applied Physics, [52, 08J31 (201305)]
(9) “Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metaloganic vapor Phase epitaxy”
Naoki Goriki,Hideto Miyake,Kazumasa Hiramatsu,Toru Akiyama,Tomonori Ito,Osamu EryuS.F Chichibu,H.Miyake,Y.Ishikawa, M.Tashiro,T.Ohtomo,K.Furusawa,K.Hazu,K.Hiramatsu, A.Uedono
Journal of Applied Physics, [113, 213506 (201306)]

2012

(1) “Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates”
Bei Ma, Daiki Jinno, Hideto Miyake, Kazumasa Hiramatsu, Hiroshi Harima
Applied Physics Letters, [100, 011901 (201201)]
(2) “Microstructure of AlN grown on a nucleation layer on a sapphire substrate”
Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu, Takaaki Kuwahara, Masatoshi Mitsuhara and Noriyuki Kuwano
Applied Physics Express, [5, 025501 (201202)]
(3) “Effects of carrier gas ratio and growth temperature on MOVPE growth of AlN”
Reina Miyagawa, Shibo Yang, Hideto Miyake and Kazumasa Hiramatsu
Physica Status Solidi (c), [9, pp.499-502 (201203)]
(4) “Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer”
H. Fang, Y. Takaya, S. Ohuchi, H. Miyake, K. Hiramatsu, H. Asamura and K. Kawamura
Physica Status Solidi (c), [9, pp.550-553 (201203)]
(5) “Fabrication of crack-free thick AlN film on a-plane sapphire by low pressure HVPE”
Yuta Takagi, Reina Miyagawa, Hideto Miyake and Kazumasa Hiramatsu
Physica Status Solidi (c), [9, pp.576-579 (201203)]
(6) “Photoluminescence due to Inelastic Biexciton Scattering from an Al0.61Ga0.39N Ternary Alloy Epitaxial layer at Room Temperature ”
Yujiro Furutani, Ryo Kittaka, Hideto Miyake, Kazumasa Hiramatsu, and Yoichi Yamada
Applied Physics Express, [5, 072401 (201206)]
(7) “AlN homoepitaxial growth on sublimation-AlNsubstrate by low-pressure HVPE”
Takuya Nomura, Kenta Okumura, Hideto Miyake, Kazumasa Hiramatsu,Osamu Eryu, Yoichi Yamada
Journal of Crystal Growth, [350, pp.69-71 (201207)]
(8) “Interaction of the dual effects triggered byAlN interlayers in thick GaN grown on3C-SiC/Si substrates”
H. Fang, Y. Takaya, H. Miyake, K. Hiramatsu, H. Asamura and K. Kawamura
Journal of Physics D: Applied Physics, [45, 385101 (201208)]
(9) “Correlation between in-plane strain and optical polarization of Si-doped lGaN epitaxial layers as a function of Al content and Si concentration”
Satoshi Kurai, Kazuhide Shimomura, Hideaki Murotani, Yoichi Yamada, Hideto Miyake and Kazumasa Hiramatsu
Journal of Applied Physics, [112, 033512 (201208)]

2011

(1) “Huge binding energy of localized biexcitons in Al-rich AlxGa1?xN”
R.Kittaka, H.Muto, H.Murotani, Y.Yamada,H.Miyake, K.Hiramatsu
Applied Physics Letters, [98, 081907 (201102)]
(2) “Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films”
S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H. Harima
Applied Physics Express, [4,031101 (201102)]
(3) “HVPE growth of c-plane AlN on a-plane sapphire using nitridation layer”
Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
Physica Status Solidi (c), [8,(2), pp.470-472 (201102)]
(4) “HVPE growth of AlN on trench-patterned 6H-SiC substrates”
K.Okumura, T.Nomura, H.Miyake, K.Hiramatsu, O.Eryuu
Physica Status Solidi (c), [8,(2), pp.467-469 (201102)]
(5) “Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN”
Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
Applied Physics Express[4.042103 (201104)]
(6) “HVPE growth of thick AlN on trench-patterned substrate
K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, H.Hirayama
Physica Status Solidi (c) [8, pp.1483-1486 (201105)]
(7) “Evidence for moving of threading dislocations during the VPE growth in GaN thin layers
Noriyuki Kuwano, Hideto Miyake, Kazumasa Hiramatsu, Hiroshi Amano and Isamu Akasaki
Physica Status Solidi (c) [8, pp.1487-1490 (201105)]
(8) “Control of AlN buffer/sapphire substrate interface for AlN growth”
Reina Miyagawa, Shibo Yang, Hideto Miyake, and Kazumasa Hiramatsu
Physica Status Solidi (c) [8, pp.2069-2071 (201107)]
(9) “Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films”
Bei Ma Miyake Hideto, Kazumasa Hiramatsu, and Hiroshi Harima
Physica Status Solidi (c) [8, pp.2066-2068 (201107)]
(10) “Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films”
Jung Gon Kim, Atsuhito Kimura, Yasuhito Kamei, Noriyuki Hasuike, Hiroshi Harima,Kenji Kisoda, Yuki Shimahara, Hideto Miyake, Kazumasa Hiramatsu
Applied Physics Letters [99, 251904 (201112)]

2010

(1) “Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGan/AlN/GaN Heterojunctions”
W.Hu, B.Ma, D.Li, R.Miyagawa, Hideto Miyake and Kazumasa Hiramatsu
Japanese Journal of Applied Physics [49, (3), pp.377011-357014(201003)]
(2) “Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen”
M.Narukawa, H.Asamura, K.Kawamura, H.Miyake, K.Hiramatsu
Japanese Journal of Applied Physics,[49,(4),pp.041001-1 ? 041001-3 (201004)]
(3) “Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal-Organic Vapor Phase Epitaxy”
K.Ooyama, K.Sugawara, S.Okuzaki, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
Japanese Journal of Applied Physics, [49, (10), pp.101001-1 ? 101001-3 (201010)]
(4) “Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs”
D.B.Li, W.G.Hu, H.Miyake, K.Hiramatsu, S.Hang
Chin.Phys.B, [19,(12),pp.127801-1 ? 127801-5 (201012)]

2009

(1) “Growth of undoped and Zn-doped GaN nanowires”
M.Narukawa, S.Koide, H.Miyake and K.Hiramatsu
Journal of Crystal Growth, [311, (10), pp.2970-2972 (200905)]
(2) “Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE”
Bei Ma, Reina Miyagawa, Weiguo Hu, Da-Bing Li, Hideto Miyake and Kazumasa Hiramatsu
Journal of Crystal Growth, [311, (10), pp.2899-2902(200905)]
(3) “Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template”
Y.Katagiri, S.Kishino, K.Okuura, H.Miyake and K.Hiramatsu
Journal of Crystal Growth [311, (10), pp.2831-2833(200905)]
(4) “Photoluminesence study of Si-doped a-plane GaN grown by MOVPE”
Dabing Li, Bei Ma, Reina Miyagawa, Weiguo Hu, Mitsuhisa Narukawa, Hideto Miyake and Kazumasa Hiramatsu
Journal of Crystal Growth [311, (10), pp.2906-2909(200905)]
(5) “Optical properties of MOVPE-grown a-plane GaN and AlGaN”
M.Narukawa, R.Miyagawa, B.Ma, H.Miyake and K.Hiramatsu
Journal of Crystal Growth [311, (10), pp.2903-2905(200905)]
(6) “Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE ”
Jie-Jun Wu, Yusuke Katagiri, Kazuki Okuura, Da-Bing Li, Hideto Miyake and Kazumasa Hiramatsu
Phys. Status Solidi C [6, (S2), pp.478-481(200906)]
(7) “In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN”
Weiguo Hu, Bei Ma, Dabing Li, Hideto Miyake and Kazumasa Hiramatsu
Applied Physics Letters[94, (23), pp.2311021-2311023(200906)]
(8) “Effects of initial stages on the crystal quality of nonpolar a-plane AlN ”
Jie-Jun Wu , Yusuke Katagiri, Kazuki Okuura, Da-Bing Li, Hideto Miyake and Kazumasa Hiramatsu
Journal of Crystal Growth[311, (14), pp.3801-3805(200907)]
(9) “Fabrication of a Binary Diffractive Lens for Controlling the Luminous Intensity Distribution of LED Light”
Atsushi Motgaito, Narito Machida, Tadanori Morikawa, Katsuhide Manabe, Hideto Miyake and Kazumasa Hiramatsu
Optical Review [16, (4), pp.455-457(200908)]
(10) “Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes”
Z. T. Chen, Y. Sakai, J. C. Zhang, T. Egawa, J. J. Wu, H. Miyake and K. Hiramatsu
Applied Physics Letters [95, (8), pp.835041-835043(200908)]
(11) “Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy”
Bei Ma, Weiguo Hu, Hideto Miyake and Kazumasa Hiramatsu
Applied Physics Letters [95, (12), pp.1219101-1219103(200909)]
(12) “Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE”
Jie-Jun Wu, Kazukeru Okuura, Kohei Fujita, Kenta Okumura, Hideto Miyake and Kazumasa Hiramatsu
Journal of Crystal Growth [311, (20), pp.4473-(200910)]
(13) “Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy”
Jiejun Wu, Kazuteru Okuura, Hideto Miyake and Kazumasa Hiramatsu
Applied Physics Express [2, (11), pp.1110041-1110043(200911)]

2008

(1) “Selective Area Growth of V-Nitride and Their Application for Emitting Devices”
K. Hiramatsu, H. Miyake and D. Li
Journal of Light & Visual Environment, [32, (2), pp.177-182 (200804)]
(2) “Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity”
A. Motogaito, K. Manabe, Y. Yamanaka, N. Machida, H. Miyake and K. Hiramatsu
Journal of Light & Visual Environment, [32, (2), pp.218-221 (200804)]
(3) “Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia”
Y. Liu, S. Koide, H. Miyake, K. Hiramatsu, *A. Nakamura, N. Nambu
Physica Status Solidi (c) [5, (6), pp.1522-1524 (200805)]
(4) “Improved optical properties of AlGaN using periodic structures”
H. Miyake, T. Ishii, A. Motogaito and K. Hiramatsu
Physica Status Solidi (c) [5, (6), pp.1822-1824 (200805)]
(5) “Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer”
H. Miyake, T. Ishii, A. Motogaito and K. Hiramatsu
Physica Status Solidi (c) [5, (6), pp.1822-1824 (200805)]
(6) “Growth of crack-free AlGaN ons elective-area-growth GaN”
H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu, *T. Ezaki and N.Kuwano
Journal of Crystal Growth [310, (23), pp.4885-4887 (200811)]
(7) “Reactor-pressure dependence of growthof a-plane GaN on r-plane sapphire”
R. Miyagawa, M.Narukawa, B.Ma, H.Miyake, K.Hiramatsu
Journal of Crystal Growth [310, (23), pp.4979-4982 (200811)]

2007

(1) “High temperature growth of AIN film by LP-HVPE”
K. Tsujisawa, S. Kishino, Y. H.Liu, H. Miyake, K. Hiramatsu, T. shibata and M. tanaka
Physica Status Solidi (c) [ 4, (7), pp. 2252-2255 (2007.5) ]
(2) “Synthesis of III-nitride microcrystals using metal-EDTA complexes”
Y. H. Liu, S. Koide, H. Miyake, K. Hiramatsu, A. Nakamura,and N. Nambu
Physica Status Solidi (c) [ 4, (7), pp. 2346-2349 (2007.5) ]
(3) “Dependence of In mole fraction in InGaN on GaN facets”
K. Nakao, D. Li, Y. H. Liu, H. Miyake, K. Hiramatsu,
Physica Status Solidi (c) [ 4, (7), pp. 2383-2386 (2007.5) ]
(4) “Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE”
D. Li, T. Katsuno, M Aoki, H. Miyake, K. Hiramatsu and T. Shibata
Physica Status Solidi (c) [ 4, (7), pp. 2494-2497 (2007.5) ]
(5) “Blue emission from InGaN/GaN hexagonal pyramid structures”
H. Miyake, K. Nakao and K. Hiramatsu
Superlattices and Microstructures [ 41, pp. 341-346 (2007.7) ]
(6) “Supression of crack generation using high-compressive-strain AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film”
K. Tsujisawa, S. Kishino, D. Li, H. Miyake, K. Hiramatsu, T. Shibata and M. Tanaka
Japanese Journal of Applied Physics [ 46,(23) , pp. 552-555 (2007.7) ]

2006

(1) “Growth characteristics of carbon nanotubes on nanotip-formed substrate”
Hideki SATO, Mai MATSUBAYASHI, Takamichi SAKAI, Koichi HATA, Hideto MIYAKE, Kazumasa HIRAMATSU, Akinori OSHITA , and Yahachi SAITO
Journal of Vacuum Science & Technology [ B 24, (2), pp. 1004-1007. ( 2006, 3- 4 ) ]
(2) “Fabrication of high-quality nitride semiconductors by facet technique”
Hideto MIYAKE, and Kazumasa HIRAMATSU
OYO BUTURI [75, (4), pp.467- 472. (2006,4) ] (in Japanese)
(3) “Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy”
Yu-huai Liu , Tomoaki Tanabe , Hideto Miyake , Kazumasa Hiramatsu , Tomohiko Shibata , and Mitsuhiro Tanaka
Physica Status Solidi (c)[3, (6) ,pp.1479-1482. (2006,5) ]
(4) “Enhanced emission efficiency of InGaN films with Si Doping”
D.Li, Y.H.Liu, T.Katsuno, K.Nakano, K.Nakamura, M.Aoki, H.Miyake and K.Hiramatsu
Physica Status Solidi (c)[3, (6) ,pp.1944-1948. (2006,6) ]
(5) “n-type conductivity control of AlGaN with high Al mole fraction”
Takuya Katsuno , Yu-huai Liu , Dabing Li , Hideto Miyake , Kazumasa Hiramatsu , Tomohiko Shibata , and Mitsuhiro Tanaka
Physica Status Solidi (c)[3, (6), pp.1435-1438. (2006,6) ]
(6) “Enhancement of blue emission from Mg-doped GaN activated at low temperature in O2/N2 mixture”
Da-Bing Li, Katsuya Nakamura, Hideto Miyake, Kazumasa Hiramatsu, Masaaki Kobayashi and Shigeki Kikuta
Physica Status Solidi (c)[3, (8), pp.2750-2753. (2006,9) ]
(7) “Influence of growth conditions on Al incorporation to AlGaN (X>0.4) grown by MOVPE”
Da-Bing Li, Masakazu Aoki, Takuya Katsuno, Hideto Miyake, Kazumasa Hiramatsu and Tomohiko Shibata
Journal of Crystal Growth[298, pp.372-374. (2007,1) ]
(8) “Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN (x>0.5) multiple quantum wells”
Da-Bing Li, Masakazu Aoki, Takuya Katsuno, Hideto Miyake, Kazumasa Hiramatsu and Tomohiko Shibata
Journal of Crystal Growth [ 298, pp.500-503. (2007,1) ]
(9) “Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model”
Hiromoto Sugawa, Toshihiro Tsuji, Kazumasa Hiramatsu, Takashi Jimbo and Tetsuo Soga
IPSJ Transactions on Mathematical Modeling and Applications [ 48, pp. 147- 157 . (2007,2) ]

2005

(1) “n-type conductivity control of AlGaN with high Al mole fraction”
D.Li, T.Katsuno, Y.Liu, H.Miyake and K.Hiramatsu
(2) “Fabrication of Thick AlN film by Low Pressure Hydride Vapor Phase Epita”
Y. H. Liu, T. Tanabe, H. Miyake, K. Hiramatsu, T. Shibata and M. Tanaka
(3) “Enhanced emission efficiency of InGaN films with Si Doping”
D. Li, Y. H. Liu, T. Katsuno, K. Nakao, K. Nakamura, M. Aoki, H. Miyake and K. Hiramatsu
(4) “Properties of Si-doped AlGaN with high Al mole fraction”
T. Katsuno, Y. H. Liu, D. Li, T. Shibata, M. Tanaka, H. Miyake and K. Hiramatsu
(5) “Enhancement of blue emission from Mg-doped GaN activated at low temperature in O2/N2 mixture”
D. Li, K. Nakamura, H. Miyake, K. Hiramatsu, M. Kobayashi and S. Kikutai
(6) “Optical Characterization of CuInSe2 Single Crystals Prepared by Traveling Heater Method”
S. Shirakata and H. Miyake

2004

(1) “Freestanding GaN substrate by advanced facet-controlled epitaxial lateral overgrowth technique with masking side facets”
S.Bohyama, H. Miyake, K. Hiramatsu, Y. Tsuchida and T. Maeda
Jpn. J. Appl. Phys. 44 (2005)pp. L24-L26.
(2) “Influence of etching condition on surface morphology of AlN and GaN layers”
N. Kuwano, R. Tajima, S. Bohyama, H. Miyake, K. Hiramatsu and T. Shibata
Phys. Stat. Sol. (a) 201 (2004) pp.2755-2759.
(3) “Time-resolved nonlinear luminescence of excitonic transistors in GaN”
Y. Yamada, Y. Yoshida, T. Taguchi, H. Miyake, K. Hiramatsu, Y. Iyechika and T. Maeda
J. Appl. Phys. 96 (2004) pp. 138-143.

2003

(1) “Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask”
Hiroyuki Naoi, Mitsuhisa Narukawa, Hideto Miyake and Kazumasa Hiramatsu
J. Crystal Growth, 248, pp. 573-577 (2003).
(2) “GaN-based Schottky barrier photodetectors from near ultraviolet to vacuum ultraviolet(360-50 nm)”
Kazumasa Hiramatsu and Atsushi Motogaito
Phys. Stat. Sol. (a), 195, pp.496-501(2003).
(3) “Study of point defects in CuGaSe2 single crystals by means of electron paramagnetic resonance and photoluminescence”
Gennadiy A. Medvedkin, Takao Nishi, Yuji Katsumata, Hideto Miyake, Katsuaki Sato
Solar Energy Materials and Solar Cells, 75, pp.135-143 (2003).
(4) “Metalorganic vapor phase epitaxy growth and study of stress in AlGaN using epitaxial AlN as underlying layer”
Yoshihiro Kida, Tomohiko Shibata, Hideto Miyake and Kazumasa Hiramatsu
Jpn. J. Appl. Phys., 42, pp.L572-574 (2003).
(5) “Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition”
B. Z. Qu, Q. S. Zhu, X. H. Sun, S. K. Wan, Z. G. Wang, H. Nagai, Yasutoshi Kawaguchi, Kazumasa Hiramatsu and Nobuhiko Sawaki
J. Vacuum Science & Technology A, 21, pp.838-841 (2003).
(6) “X-ray analysis of twist and tilt of GaN prepared by facet-controlled epitaxial lateral overgrowth”
Yasushi Iyechika, Masaya Shimizu, Takayoshi Maeda, Hideto Miyake and Kazumasa Hiramatsu
Jpn. J. Appl. Phys., 42, pp.L732-L734 (2003).
(7) “Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X-ray (SX) region (10-100 nm) “
Atsushi Motogaito, Hironobu Watanabe, Kazumasa Hiramatsu, Kazutoshi Fukui, Yutaka Hamamura and Kazuyuki Tadatomo
Phys. Stat. Sol. (a), 200, pp.147-150 (2003).
(8) “High performance of Schottky detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer”
Hideto Miyake, Hironori Yasukawa, Yoshihiro Kida, Keiichi Ohta, Yasuhiro Shibata, Atsushi Motogaito, Kazumasa Hiramatsu, Youichiro Ohuchi, Kazuyuki Tadatomo, Yutaka Hamamura and Kazutoshi Fukui
Phys. Stat. Sol. (a), 200, pp.151-154 (2003).
(9) “High-quality AlN epitaxial films on (0001)-faced sapphire and 6H-SiC substrate”
Tomohiko Shibata, Keiichiro Asai, Shigeaki Sumiya, M. Mouri, Mitsuhiro Tanaka, Osamu Oda, Hiroyuki Katsukawa, Hideto Miyake and Kazumasa Hiramatsu
Phys. Stat. Sol. (c), 0, pp.2023-2026 (2003).
(10) “MOVPE growth and n-type conductivity control of high-quality Si-doped Al0.5Ga0.5N using epitaxial AlN as an underlying layer”
Yoshihiro Kida, Akirta Iishiga, Tomohiko Shibata, Hiroyuki Naoi, Hideto Miyake, Kazumasa Hiramatsu and Mitsuhiro Tanaka
Phys. Stat. Sol. (c), 0, pp.2128-2131 (2003).
(11) “Growth of high-quality GaN on FACELO substrate by raised-pressure HVPE”
Shinya Bohyama, Kenji Yoshikawa, Hiroyuki Naoi, Hideto Miyake, Kazumasa Hiramatsu and Takayoshi Maeda
Phys. Stat. Sol. (c), 0, pp.2159-2162 (2003).
(12) “TEM analysis of threading dislocations in crack-free AlxGa1-xN grown on an AlN (0001) template”
Noriyuki Kuwano, T. Tsuruda, Yoshihiro Kida, Hideto Miyake, Kazumasa Hiramatsu and Tomohiko Shibata
Phys. Stat. Sol. (c), 0, pp.2444-2447 (2003).
(13) “Improved optical properties using self-organized GaN nanotip structure”
Hiroki Yamaji, Yusuke Terada, Harumasa Yoshida, Hideto Miyake and Kazumasa Hiramatsu
Phys. Stat. Sol. (c), 0, pp.2566-2569 (2003).
(14) “Spatially resolved cathodoluminescence study of selected-area ELO-GaN grown on Si (111) substrates”
Hiroyuki Naoi, Mitsuhisa Narukawa, Hideto Miyake and Kazumasa Hiramatsu
Phys. Stat. Sol. (c), 0, pp.2644-2649 (2003).

2002

(1) “Influence of Ge and Si on reactive ion etching of GaN in Cl2 plasma”
Tatsuhiro Urushido, Harumasa Yoshida, Hideto Miyake and Kazumasa Hiramatsu
Jpn. J. Appl. Phys. 41 pp.L31-L33 (2002).
(2) “Distribution of threading dislocations in epitaxial lateral overgrowth GaN by hydride vapor-phase epitaxy using mixed carrier gas of H2 and N2″
Shinya Bohyama, Kenji Yoshikawa, Hiroyuki Naoi, Hideto Miyake, Kazumasa Hiramatsu, Yasushi Iyechika and Takayoshi Maeda
Jpn. J. Appl. Phys. 41 pp.75-76 (2002).
(3) “Photoreflectance of CuAlxIn1-xSe2 alloys”
Sho Shirakata and Hideto Miyake
Jpn. J. Appl. Phys. 41 pp.77-78 (2002).
(4) “Carrier-gas dependence of ELO GaN grown by hydride VPE”
Hideto Miyake, Shinya Bohyama, Kazumasa Hiramatsu, Yasushi Iyechika, Takayoshi Maeda
J. Cryst. Growth, 237, pp.1055-1059 (2002).
(5) “Microstructures of two-step facet-controlled ELO-GaN grown by MOVPE method-effect of mask geometry”
Kayo Horibuchi, Noriyuki, Kuwano, Hideto Miyake, Kazumasa Hiramatsu
J. Cryst. Growth, 237, pp.1070-1074 (2002).
(6) “Antireflection effect of self-organized GaN nanotip structure from ltraviolet to visible region”
Harumasa Yoshida, Yuusuke Terada, Hideto Miyake and Kazumasa Hiramatsu
Jpn. J. Appl. Phys., 41, pp. L1134-L1136 (2002).
(7) “Field emission from GaN self-organized nanotips”
Yuusuke.Terada, Harumasa.Yoshida, Tatsuya. Urushido, Hideto. Miyake and Kazumasa. Hiramatsu
Jpn. J. Appl. Phys., 41, pp. L1194-L1196 (2002).
(8) “Growth of crack-free and high-quality AlGaN with high Al content using Epitaxial AlN。ハ0001。ヒFilms on Sapphire”
Yoshihiro Kida, Tomohiko Shibata, Hiroyuki Naoi, Hideto Miyake, Kazumasa Hiramatsu and Mitsuhiro Tanaka
Phys. Stat. Sol. (a), 194, pp. 498-501 (2002).
(9) “High quality GaN grown by raised-pressure HVPE”
Shinya Bohyama, Kenji Yoshikawa, Hiroyuki Naoi, Hideto Miyake, Kazumasa Hiramatsu, Yasushi Iyechika and Takayosi Maeda
Phys. Stat. Sol. (a), 194, pp. 528-531 (2002).
(10) “High quality GaN grown by facet-controlled ELO (FACELO) technique”
Hideto Miyake, Ryo Takeuchi, Kazumasa Hiramatsu, Hiroyuki Naoi, Yasushi Iyechika, Takayoshi Maeda, Till Riemann, Frank Bertram, Juergen Christen
Phys. Stat. Sol.(a) 194, pp.545-549 (2002).

2001

(1) “ESR and PL characterization of point defects in CuGaSe2 single crystals”
Takao Nishi, Yuji Katsumata, Katsuaki Sato and Hideto Miyake
Solar Energy Materials & Solar Cells 67 pp.273-278 (2001).
(2) “ESR and PL characterization of point defects in CuGaSe2 single crystals”
T. Wada, Y. Hashimoto, S. Nishiwaki, T. Satoh, S. Hayashi and Hideto Miyake
Solar Energy Materials & Solar Cells 67 pp.305-310 (2001).
(3) “Sharp band edge photoluminescence of high-purity CuInS2 single crystals”
Kenji Yoshino, Tetsuo Ikari, Sho Shirakata, Hideto Miyake and Kazumasa Hiramatsu
Appl. Phys. Lett., 78 pp. 742-744 (2001).
(4) “GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE”
Kazumasa Hiramatsu, Masahiro Haino, Motoo Yamaguchi, Hideto Miyake, Atsushi Motogaito, Nobuhiko Sawaki, Yasushi Iyechika and Takayoshi Maeda
Materials Science and Engineering B82 pp.62-64 (2001).
(5) “Transmission electron microscopy investigation of dislocations in GaN layer grown by Facet-Controlled Epitaxial Lateral Overgrowth”
Yoshio Honda, Yasushi Iyechika, Takayoshi Maeda, Hideto Miyake and Kazumasa Hiramatsu
Jpn. J. Appl. Phys., 40 pp.L309-L312 (2001).
(6) “In situ monitoring of GaN reactive ion etching by optical emission spectroscopy”
Harumasa Yoshida, Tatsuhiro Urushido, Hideto Miyake and Kazumasa Hiramatsu
Jpn. J. Appl. Phys., 40 pp.L313-L315 (2001).
(7) “Characterization of GaN-based Schottky barrier ultraviolet (UV) detectors in the UV and vacuum ultraviolet (VUV) region using synchrotron radiation”
Atsushi Motogaito, Motoo Yamaguchi, Kazumasa Hiramatsu, Masahiro Kotoh, Youichiro Ohuchi, Kazuyuki Tadatomo, Yutaka Hamamura and Kazutoshi Fukui
Jpn. J. Appl. Phys., 40 pp.L368-L370 (2001).
(8) “Epitaxial lateral overgrowth techniques used in group III nitride epitaxy”
Kazumasa Hiramatsu
J. Phys.: Condens. Matter 13 pp.6961-6975 (2001).
(9) “Raman scattering study InGaN grown by metalorganic vapor phase epitaxy”
Tokuo Sugiura, Yasutoshi Kawaguchi, Takehiko Tsukamoto, Hiroya Andoh, Masahito Yamaguchi, Kazumasa Hiramatsu, and Nobuhiko Sawaki
Jpn. J. Appl. Phys. 40 pp.5955-5958 (2001).
(10) “Characterization of GaN based UV-VUV detectors in the range 3.4-25 eV by using synchrotron radiation”
Atsushi Motogaito, Keiichi Ohta, Kazumasa Hiramatsu, Youichiro Ohuchi, Kazuyuki Tadatomo, Yutaka Hamamura and Kazutoshi Fukui
Phys. Stat. Solidi (a) 188 pp.337-340 (2001).
(11) “Fabrication and optical characterization of facet-controlled ELO (FACELO) GaN grown by LP-MOVPE”
Hideto Miyake, Mitsuhisa Narukawa, Kazumasa Hiramatsu, Hiroyuki Naoi, Yasushi Iyechika and Takayoshi Maeda
Phys. Stat. Solidi (a) 188 pp.725-728 (2001).
(12) “Formation of horizontal dislocations in epitaxially lateral overgrown (ELO) GaN”
Sigefumi Nishimoto, Kayo Horibuchi, Kensuke Oki, Noriyuki Kuwano, Hideto Miyake and Kazumasa Hiramatsu
Phys. Stat. Solidi (a) 188 pp.739-742 (2001).
(13) “Formation of GaN self-organized nanotips by reactive ion etching”
Harumasa Yoshida, Tatsuhiro Urushido, Hideto Miyake and Kazumasa Hiramatsu
Jpn. J. Appl. Phys. 40 pp.L1301-L1304 (2001).

2000

(1) “Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN”
A. Kaschner, J. Holst, A. Hoffmann, I. Broser, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata and N. Sawaki
Journal of Luminescence 87-89 pp.1192-1195 (2000).
(2) “Crystalline and optical properties of ELO GaN by HVPE using tungsten mask”
K. Hiramatsu, A. Motogaito, H. Miyake, Y. Honda, Y. Iyechika, T. Maeda, F. Bertram, J. Christen and A. Hoffmann
IEICE Trans. Electron., E83-C pp.620-626 (2000).
(3) “Buried tungsten metal structure fabricated by epitaxial-lateral-overgrown GaN via low-pressure metalorganic vapor phase epitaxy”
M. Haino, M. Yamaguchi, H. Miyake, A. Motogaito, K. Hiramatsu, Y. Kawaguchi, N. Sawaki, Y. Iyechika and T. Maeda
Jpn. J. Appl. Phys., 39 pp.L449-452 (2000).
(4) “Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapor phase epitaxy methods”
N. Kuwano, K. Tsukamoto, W. Taki, K. Horibuchi, K. Oki, Y. Kawaguchi, T. Shibata, N. Sawaki and K. Hiramatsu
J. Electron Microscopy, 49 pp.331-338 (2000).
(5) “Defect structure in selective area growth GaN pyramid on (111) Si substrate”
S. Tanaka, Y. Kawaguchi, N. Sawaki, M. Hibino and K. Hiramatsu
Appl. Phys. Lett., 76 pp. 2701-2703 (2000).
(6) “Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples”
A. Kaschner, A. Hoffmann, C. Thomsen, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, H. Sone and N. Sawaki
Appl. Phys. Lett., 76 pp. 3418-3420 (2000).
(7) “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)”
K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika and T. Maeda
J. Cryst. Growth, 221 pp.316-326 (2000).
(8) “Optical properties of CuGaSe2 and CuAlSe2 layers epitaxially grown on Cu(In0.04Ga0.96)Se2 substrates”
S. Shirakata, S. Chichibu, H. Miyake and K. Suguyama
J. Appl. Phys., 87 pp.7294-7302 (2000).

1999

(1) “Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN : Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy”
F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, K. Hiramatsu, T. Shibata and N. Sawaki
Appl. Phys. Lett. 74 pp.359-361 (1999).
(2) “Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN”
A. Kaschner, A. Hoffmann, C. Thomsen, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata and N. Sawaki
Appl. Phys. Lett., 74 pp.3320-3322 (1999).
(3) “Optical and crystalline properties of epitaxial-lateral-overgrown-GaN using tungsten mask by hydride vapor phase epitaxy”
Hiroki Sone, Shingo Nambu, Yasutoshi Kawaguchi, Masahito Yamaguchi, Hideto Miyake, Kazumasa Hiramatsu, Yasushi Iyechika, Takayoshi Maeda and Nobuhiko Sawaki
Jpn. J. Appl. Phys., 38 pp.L356-359 (1999).
(4) “Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy”
Kazumasa Hiramatsu, Hidetada Matsushima, Takumi Shibata, Yasutoshi Kawaguchi, and Nobuhiko Sawaki
Mater. Sci. & Eng., B 59 pp.104-111 (1999).
(5) “Epitaxial lateral overgrowth of GaN structures : spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy”
F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, K. Hiramatsu T. Shibata and N. Sawaki
Mater. Sci. & Eng., B 59 pp. 117-121 (1999).
(6) “Impact of the ZnO buffer on the optical properties of GaN : time resolved micro-photoluminescence”
A. Hoffmann, J. Holst, A. Kaschner, H. Siegle, J. Christen, P. Fischer, F. Bertram and K. Hiramatsu
Mater. Sci. & Eng., B 59 pp. 163-167 (1999).
(7) “Hydrogen and nitrogen ambient effects on epitaxial lateral overgrowth (ELO) of GAN via MOVPE”
Kazuyuki Tadatomo, Yoichiro Ohuchi, Hiroaki Okagawa, Hirotaka Itoh, Hideto Miyake and Kazumasa Hiramatsu
MRS Internet J. Nitride Semicond. Res. 4S1, G3.1 (1999).
(8) “Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten mask”
Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone, Masahito Yamaguchi, Hideto Miyake, Kazumasa Hiramatsu, Nobuhiko Sawaki, Yasushi Iyechika and Takayoshi Maeda
MRS Internet J. Nitride Semicond. Res. 4S1, G4.1 (1999).
(9) “Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy”
Hideto Miyake, Atsushi Motogaito and Kazumasa Hiramatsu
Jpn. J. Appl. Phys. 38 pp.L1000-L1002 (1999).
(10) “Crystal orientation fluctuation of epitaxial-lateral-overgrown GaN with W mask and SiO2 mask observed by transmission electron diffraction and X-ray rocking curves”
Yoshiaki Honda, Yasushi Iyechika, Takayoshi Maeda, Hideto Miyake, Kazumasa Hiramatsu, Hiroki Sone and Nobuhiko Sawaki
Jpn. J. Appl. Phys. 38 pp.L1299-L1302 (1999).
(11) “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides : Effects of reactor pressure in MOVPE growth”
Kazumasa Hiramatsu, Katsuya Nishiyama, Atsushi Motogaito, Hideto Miyake, Yasushi Iyechika, and Takayoshi Maeda
Phys. Stat. Sol. (a) 176 pp.535-543 (1999).
(12) “Selective area growth of GaN on stripe patterned (111) Si substrate by metalorganic vapor phase epitaxy”
Y. Kawaguchi, Y. Honda, M. Yamaguchi, N. Sawaki and K. Hiramatsu
Phys. Stat. Sol. (a) 176 pp.553-556 (1999).
(13) “Influence of ambient gas on the epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy”
Y. Kawaguchi, S. Nambu, M. Yamaguchi, N. Sawaki, H. Miyake, K. Hiramatsu, K. Tsukamoto, N. Kuwano and K. Oki
Phys. Stat. Sol. (a) 176 pp.561-565 (1999).
(14) “Microstructure of Cu(In, Ga)Se2 films deposited in low Se vapor pressure”
Shiro Nishiwaki, Naoki Kohara, Takayuki Negami, Hideto Miyake and Takahiro Wada
Jpn. J. Appl. Phys. 38 pp.2888-2892 (1999).

1998

(1) “The formation of crystalline defects and crystal growth mechanism in InxGa1-xN/GaN heterostructure grown by metalorganic vapor phase epitaxy”
Yasutoshi Kawaguchi, Masaya Shimizu, Masahito Yamaguchi, Kazumasa Hiramatsu, Nobuhiko Sawaki, Wataru Taki, Hidetaka Tsuda, Noriyuki Kuwano, Kensuke Oki, Tsvestanka Zheleva and Robert F. Davis
J. Crystal Growth, 189/190 pp. 24-28 (1998).
(2) “Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth”
Takumi Shibata, Hiroki Sone, Katsunori Yahashi, Masahito Yamaguchi, Kazumasa Hiramatsu, Nobuhiko Sawaki and Nobuo Itoh
J. Crystal Growth, 189/190 pp. 67-71 (1998).
(3) “Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structureby epitaxial lateral overgrowth (ELO)”
Hidetada Matsushima, Masahito Yamaguchi, Kazumasa Hiramatsu and Nobuhiko Sawaki
J. Crystal Growth, 189/190 pp. 78-82 (1998).
(4) “Characterization of mid-gap states in HVPE and MOVPE-grown n-type GaN”
P. Hacke, H. Okushi, T.Kuroda, T. Detchprohm, K. Hiramatsu, and N. Sawaki
J. Crystal Growth, 189/190 pp. 541-545 (1998).
(5) “Local strain distribution of hexagonal GaN pyramids”
A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura and N. Sawaki
J. Crystal Growth, 189/190 pp. 630-633 (1998).
(6) “Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy “
Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone, Takumi Shibata, Hidetada Matsushima, Masahito Yamaguchi, Hideto Miyake, Kazumasa Hiramatsu, and Nobuhiko Sawaki
Jpn. J. Appl. Phys. 37 (7B), pp. L845-L848 (1998).
(7) “Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy”
H. Nagai, Q. S. Zhu, Y. Kawaguchi, K. Hiramatsu and N. Sawaki
Appl. Phys. Lett. 73 (14), pp.2024-2026 (1998).
(8) “THM Growth and Characterization of CuGaxIn1-xSe2 Solid Solutions”
H. Miyake, T. Haginoya and K. Sugiyama
Sol.Energy&Sol.Cells, 50, pp 51-56 (1998).
(9) “Optical constants of CuGaSe2 and CuInSe2″
T. Kawashima, S. Adachi, H. Miyake and K. Sugiyama
J. Appl. Phys., 84 (9) pp.5202-5209 (1998).

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